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dc.contributor.author | Khomchenko, A. V. | |
dc.contributor.author | Хомченко, А. В. | |
dc.date.accessioned | 2019-02-01T11:21:26Z | |
dc.date.available | 2019-02-01T11:21:26Z | |
dc.date.issued | 2002 | |
dc.identifier.citation | Khomchenko A.V. m-lines technique application for studying of optical nonlinearity in thin films at low light intensity / Khomchenko A.V. // Optics Communications. -2002. - Vol.201, № 4-6. - P.363-372. | ru_RU |
dc.identifier.uri | http://e.biblio.bru.by/handle/1212121212/8545 | |
dc.description.abstract | In the range of a light intensity below 0:1 W/cm2 nonlinear optical properties of semiconductor and dielectric thin films are studied at a wavelength of 632.8 nm. Optical nonlinearity was investigated by the technique of the spatial Fourier spectroscopy of guided modes excited in these thin-film structures in the self-effect case. The nonlinear refractive index and the absorption coefficient were found to be about 10 3 cm2/W for semiconductor films and multilayer structures and about 10 6 cm2/W for quartz glass films. Origin of this optical nonlinearity is considered as a photo-induced modification of surface states in the optical band gap. | ru_RU |
dc.language.iso | en | ru_RU |
dc.publisher | Elsevier Science B.V. | ru_RU |
dc.subject | m-lines | ru_RU |
dc.subject | fourier spectrum | ru_RU |
dc.subject | optical nonlinearity | ru_RU |
dc.subject | thin film | ru_RU |
dc.subject | interface | ru_RU |
dc.subject | Публикации кафедры "Физика" | |
dc.title | m-lines technique application for studying of optical nonlinearities in thin films at a low light intensity | ru_RU |
dc.type | Article | ru_RU |