dc.contributor.author |
Khomchenko, A. V. |
|
dc.contributor.author |
Хомченко, А. В. |
|
dc.date.accessioned |
2019-02-01T11:21:26Z |
|
dc.date.available |
2019-02-01T11:21:26Z |
|
dc.date.issued |
2002 |
|
dc.identifier.citation |
Khomchenko A.V. m-lines technique application for studying of optical nonlinearity in thin films at low light intensity / Khomchenko A.V. // Optics Communications. -2002. - Vol.201, № 4-6. - P.363-372. |
ru_RU |
dc.identifier.uri |
http://e.biblio.bru.by/handle/1212121212/8545 |
|
dc.description.abstract |
In the range of a light intensity below 0:1 W/cm2 nonlinear optical properties of semiconductor and dielectric thin films are studied at a wavelength of 632.8 nm. Optical nonlinearity was investigated by the technique of the spatial Fourier spectroscopy of guided modes excited in these thin-film structures in the self-effect case. The
nonlinear refractive index and the absorption coefficient were found to be about 10 3 cm2/W for semiconductor films and multilayer structures and about 10 6 cm2/W for quartz glass films. Origin of this optical nonlinearity is considered as a photo-induced modification of surface states in the optical band gap. |
ru_RU |
dc.language.iso |
en |
ru_RU |
dc.publisher |
Elsevier Science B.V. |
ru_RU |
dc.subject |
m-lines |
ru_RU |
dc.subject |
fourier spectrum |
ru_RU |
dc.subject |
optical nonlinearity |
ru_RU |
dc.subject |
thin film |
ru_RU |
dc.subject |
interface |
ru_RU |
dc.subject |
Публикации кафедры "Физика" |
|
dc.title |
m-lines technique application for studying of optical nonlinearities in thin films at a low light intensity |
ru_RU |
dc.type |
Article |
ru_RU |